Target structure of physical vapor deposition

ABSTRACT

A sputtering target structure includes a body having a first side and an opposing second side. A first sputtering target is coupled to the first side of the body. The first sputtering target includes a first material. A second sputtering target is coupled to the second side of the body. The second sputtering target includes a second material. A rotation mechanism is coupled to the body and is configured to allow rotation of the body from a first orientation to a second orientation.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.16/931,517, filed on Jul. 17, 2020, which is a continuation of U.S.patent application Ser. No. 15/882,899, filed on Jan. 29, 2018, andentitled “TARGET STRUCTURE OF PHYSICAL VAPOR DEPOSITION,” which claimedbenefit to U.S. Provisional Appl. Ser. No. 62/527,156, filed on Jun. 30,2017, and entitled “PVD TARGET,” each of which are incorporated byreference herein in their entireties.

BACKGROUND

Current physical vapor deposition (PVD) processes uses targets as thesource of deposited materials. Depending on the process recipe, thetarget may be used to deposit one or more material at a time, forexample, a metal and a compound containing the metal, in separatelayers. However, disparate materials cannot be used by varying theprocess recipe. In order to deposit disparate materials, for example,AlCu and TiN, the workpiece must be transferred between differentprocess chambers. In high temperature processing, the time and delaywhile transferring between chambers can affect material properties suchas grain size and interfacial properties.

BRIEF DESCRIPTION OF THE FIGURES

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not necessarily drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1 illustrates a double-sided target including a firsts sputteringtarget and a second sputtering target, in accordance with someembodiments.

FIG. 2 illustrates a chamber for vacuum deposition using thedouble-sided target of FIG. 1 , in accordance with some embodiments.

FIG. 3A illustrates a side view of a rotation mechanism for rotating thedouble-sided target of FIG. 1 , in accordance with some embodiments.

FIG. 3B illustrates a cross-sectional view of the rotation mechanism ofFIG. 3A, in accordance with some embodiments.

FIG. 3C illustrates a side elevation cross-sectional view of therotation mechanism of FIG. 3A, in accordance with some embodiments.

FIGS. 4A-4C illustrate a double-sided target in various orientations, inaccordance with some embodiments.

FIG. 5 illustrates a deposition system including a plurality ofdeposition chambers each having double-sided sputtering targets locatedtherein, in accordance with some embodiments.

FIG. 6 is a flow chart illustrating a method of vacuum deposition usinga double-sided target, in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the subject matter.Specific examples of components and arrangements are described below tosimplify the present disclosure. These are, of course, merely examplesand are not intended to be limiting. For example, the formation of afirst feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

In various embodiments, a double-sided sputtering target is disclosed.The double-sided sputtering target includes a first sputtering targethaving a first material and a second sputtering target having a secondmaterial. The first material can include a titanium-based material, suchas TiN and the second material can include an aluminum alloy, such asAlCu. The first sputtering target is coupled to a first side of thedouble-sided sputtering target and the second sputtering target iscoupled to a second side of the double-sided sputtering target. Thedouble-sided sputtering target is configured to be received within adeposition chamber and coupled to a rotation mechanism. The rotationmechanism is configured to rotate the double-sided sputtering targetduring an in-situ deposition process. For example, in some embodiments,the in-situ deposition process can include a first deposition phase anda second deposition phase. The rotation mechanism can rotate thedouble-sided sputtering target between the first deposition phase andthe second deposition phase.

FIG. 1 illustrates a double-sided sputtering target structure 2, inaccordance with some embodiments. The double-sided sputtering targetstructure 2 includes a rotation body 4. A first side 6 a of the rotationbody 4 is configured to couple to a first sputtering target 8 a and asecond side 6 b of the rotation body 4 is configured to couple to asecond sputtering target 8 b. In some embodiments, each side 6 a, 6 b ofthe rotation body 4 has a recess 12 sized and configured to receive asputtering target 8 a, 8 b therein. The recess 12 can include an innerperimeter configured to match an outer profile of a respectivesputtering target 8 a, 8 b.

In various embodiments, the perimeter 14 of the rotation body 4 can beany suitable shape. For example, a suitable shape of the perimeter caninclude a square shape, a rounded shape, an oblong shape, and/or anyother suitable shape. The shape of the perimeter 14 can be the sameshape as or different from the shape of the sputtering targets 8 a, 8 b.For example, in the illustrated embodiment, the rotation body 4 definesa rectangular perimeter 14 and a circular recess 12 (corresponding to acircular perimeter of the sputtering targets 8 a, 8 b) although it willbe appreciated that the rotation body 4 and/or the recess 12 can includeany suitable geometric shape.

In some embodiments, the rotation body 4 defines at least one hole 16extending from the first surface 6 a of the body 4 to a second surface 6b of the body 4. The at least one hole 16 is sized and configured toreceive a retention device 18 therein. For example, in some embodiments,the at least one hole 16 is sized and configured to receive a magnet, apost, and/or any other suitable retention device. The hole 16 can bepositioned in a center of the rotation body 4 and extend into therecesses 12 defined by the body 4. In other embodiments, the at leastone hole 16 can be positioned off-center and/or outside of the recesses12. Although embodiments are illustrated including at least one hole 16,it will be appreciated that in some embodiments the at least one hole 16can be omitted and alternative retention devices can be used.

In some embodiments, a retention device 18 is positioned through the atleast one hole 16 to maintain the sputtering targets 8 a, 8 b in a fixedposition within the respective recess 12. The retention device 18 caninclude a first magnetic plate 20 a and a second magnetic plate 20 bcoupled between the rotation body 4 and the sputtering targets 8 a, 8 b.The first magnetic plate 20 a and the second magnetic plate 20 b can becoupled by a shaft 22 sized and configured to be inserted through thehole 16. The shaft 22 and the hole 16 center the magnetic plates 20 a,20 b within the recesses 12 defined by the body 4. The magnetic plates20 a, 20 b can include permanent magnets and/or electromagnets. Althoughmagnetic plates 20 a, 20 b are illustrated, it will be appreciated thatany suitable magnetic structure, such as concentric magnetic rings,concentrically disposed independent magnets, and/or any other suitablemagnetic structures can be used and are within the scope of thisdisclosure. In some embodiments, the geometry of the magnetic plates 20a, 20 b is complimentary to a geometry of the sputtering targets 8 a, 8b. In some embodiments, the magnetic plates 20 a, 20 b can include anadhesive coating on at least one side configured to couple to anon-magnetic surface, such as a non-magnetic sputtering target and/or anon-magnetic rotation body 4.

In some embodiments, the first sputtering target 8 a is coupled to afirst side 6 a of the rotation body 4 and the second sputtering target 8b is coupled to a second side 6 b of the rotation body 4. The first andsecond sputtering targets 8 a, 8 b can have any suitable shape, such asa circular shape, a ring shape, and/or any other suitable shape. Thesputtering targets 8 a, 8 b have a predetermined thickness configured toprovide a predetermined amount of sputtering before needing to bereplaced. In some embodiments, the first and second sputtering targets 8a, 8 b include different materials. The materials of the sputteringtargets 8 a, 8 b provide a source material to the surface of a substrateduring a sputtering process. In some embodiments, the material of thesputtering target 8 a, 8 b is provided directly to the surface of thesubstrate. In other embodiments, the source material from the sputteringtarget 8 a, 8 b is combined with one or more additional materials, forexample a gaseous material or plasma provided within a depositionchamber, to generate a deposited material.

In some embodiments, the first sputtering target 8 a and/or the secondsputtering target 8 b can include one or more selected materials. Forexample, in some embodiments, the first and/or the second sputteringtarget 8 a, 8 b can include titanium (Ti), titanium nitride (TiN), analuminum alloy, such as an aluminum copper alloy (AlCu), an aluminum(Al) alloy, a platinum (Pt) alloy, cobalt (Co), etc. In someembodiments, the first sputtering target 8 a includes a first material,such as Ti, and the second sputtering target 8 b includes a secondmaterial, such as AlCu, although it will be appreciated that othercombinations are possible. The one or more materials can be selected toform a predetermined pattern and/or structure on a work-piece, asdiscussed in more detail below.

In some embodiments, the rotation body 4 includes one or more rotationmechanisms 24 a, 24 b. The rotation mechanisms 24 a, 24 b are configuredto rotatably couple the rotation body 4 to a structure, such as thedeposition chamber 100 discussed below with respect to FIG. 2 . The oneor more rotation mechanisms 24 a, 24 b can include a shaft 26 extendingfrom one or more of the side walls 14 a, 14 b of the rotation body 4. Insome embodiments, the rotation mechanisms 24 a, 24 b are aligned on asingle rotational axis 30 extending through a center of the rotationbody 4. Although embodiments are illustrated including rotation shafts26, it will be appreciated that any suitable rotation mechanism can beused.

The double-sided sputtering target structure 2 is configured to bepositioned within a deposition chamber, as discussed in more detailbelow. The rotation mechanisms 24 a, 24 b are configured to allowrotation of the rotation body 4 from a first orientation to a secondorientation within the deposition chamber. In some embodiments, thefirst orientation includes the first sputtering target 8 a in a down (orin-use) orientation and the second sputtering target 8 b in an up (ornon-use) orientation and the second orientation includes the secondsputtering target 8 b in the down orientation and the first sputteringtarget 8 a in the up orientation. Although specific orientations andembodiments are discussed herein, it will be appreciated that the firstorientation and/or the second orientation can position the first andsecond sputtering targets 8 a, 8 b in any suitable orientation such thatthe first and second sputtering targets 8 a, 8 b are segregated during adeposition process such that only a single sputtering target 8 a, 8 b(e.g., single source) is used during a deposition process.

FIG. 2 illustrates a chamber 100 for PVD sputtering configured toreceive the double-sided target structure 2, in accordance with someembodiments. The chamber 100 includes a chamber body 102 defining atarget receiving area 104 and a work-piece receiving area 106. In someembodiments, the target receiving area 104 is disposed above thework-piece receiving area 106, although it will be appreciated thatother orientations are possible. The target receiving area 104 is sizedand configured to receive the double-sided target structure 2 therein.The work-piece receiving area 106 is sized and configured to receive awork-piece 130, such as a substrate therein. The work-piece 130 isconfigured to receive one or more layers of material through PVDsputtering.

In some embodiments, the double-sided target structure 2 is maintainedwithin the target receiving area 104 by rotation mechanisms 24 a, 24 b.The rotation mechanisms 24 a, 24 b maintain the double-sided targetstructure 2 in a fixed longitudinal, horizontal, and vertical positionwithin the receiving area 104 while allowing rotation of thedouble-sided target structure 2 along an axis of rotation. The chamberbody 102 can include one or more rotation elements configured tointerface with the rotation mechanisms 24 a, 24 b of the rotation body4. For example, in the illustrated embodiment, the rotation mechanisms24 a, 24 b include rotation shafts extending from the rotation body 4through a portion of the chamber body 102 defining the receiving area104. The chamber body 102 can include complimentary rotation elements,such as bushings, bearings, gears, etc. configured to couple therotation mechanisms 24 a, 24 b to the chamber body 102. Thecomplimentary rotation elements can be selected based on the rotationmechanism 24 a, 24 b of the double-sided sputtering target structure 2.

In some embodiments, the work-piece receiving area 106 includes apedestal 110 sized and configured to receive a work-piece 130 thereon.The pedestal 110 positions the work-piece 130 at a predetermineddistance from a selected one of the sputtering targets 8 a, 8 bpositioned in an opposed facing relationship with the work-piece 130.For example, in some embodiments, the sputtering target 8 a, 8 b coupledto a down-facing side 6 a of the body 4 is positioned in an opposedfacing relationship with the work-piece 130. The pedestal 110 positionsthe work-piece 130 at a predetermined vertical distance from theselected one of the sputtering targets 8 a, 8 b.

In some embodiments, the double-sided target structure 2 is maintainedin a predetermined vertical position with respect to the pedestal 110such that the rotation body 4 can be rotated from a first orientation toa second orientation without contacting and/or otherwise interactingwith a work-piece 130 positioned on the pedestal 110. In embodiments,the distance between the double-sided target structure 2 and thepedestal 110 can be adjustable, for example, by raising or lowering thedouble-sided target structure 2 and/or the pedestal 110 to providesufficient clearance for rotation of the double-sided target structure2. For example, in some embodiments, the pedestal 110 is verticallyadjustable to a minimum spacing with respect to the double-sided targetstructure 2 substantially equal to half the width of the rotation body 4plus the thickness of a work-piece placed on the pedestal 110, althoughit will be appreciated that a greater spacing is can be provided toallow additional clearance between the rotation body 4 and the workpiece 130. The pedestal 110 can be vertically lowered to a bottom of thework-piece receiving area 106. A robotic arm (not shown) delivers awork-piece 130 into the work-piece receiving area 106. The pedestal 110is raised to support the work-piece 130 and the robotic arm iswithdrawn. The pedestal 110 can be additionally adjusted prior to and/orduring a sputtering process. In other embodiments, the double-sidedtarget structure 2 is removed from the target receiving area 104,rotated, and repositioned within the target receiving area 104. In someembodiments, the distance between the work-piece 130 and thedouble-sided target structure 2 is selected to optimize a PVD sputteringprocess and/or is adjustable during a sputtering process.

In some embodiments, a drive mechanism 112 is positioned to interfacewith one of the rotation mechanisms 24 a, 24 b of the double-sidedtarget structure 2. The drive mechanism 112 is configured to rotate thedouble-sided target structure 2 from a first orientation to a secondorientation. The drive mechanism 112 can include any suitable drivemechanism, such as a motor or other mechanical drive mechanism, ahand-drive mechanism such as a crank, and/or any other suitablemechanism. The drive mechanism 112 is coupled to an outer surface of thechamber body 102 and is configured to rotatably couple to thedouble-sided target structure 2. The drive mechanism 112 is isolatedfrom the receiving area 104 by a wall of the chamber body 102 and/or oneor more complimentary rotation elements.

In operation, the double-sided target structure 2 can be positioned withthe first sputtering target 8 a in an opposed relationship with thework-piece 130 to deposit a first material layer on the work-piece 130.After depositing the first material layer, the double-sided targetstructure 2 can be rotated to position the second sputtering target 8 bin an opposed relationship with the work-piece 130. A second materiallayer is deposited over the first material layer. In other embodiments,the second material layer may be deposited prior to the first materiallayer (i.e., the first material layer is deposited over the secondmaterial layer). The first and second material layers are deposited inthe same chamber 100 and are deposited without needing to open orinteract with the interior of the chamber 100. In some embodiments, thefirst material layer and the second material layer are deposited withoutcleaning the deposition chamber 100 between material layers.

In some embodiments, the drive mechanism 112 is coupled to a controller114 configured to control operation of the drive mechanism 112. Thecontroller 114 can include any suitable controller, such as amicrocontroller, field programmable gate-array, application specificintegrated circuit (ASIC), programmable logic controller (PLC), and/orany other suitable controller. The controller 114 is configured tooperate the drive mechanism 112 to rotate the double-sided targetstructure 2 in response to one or more predetermined process conditions,such as an elapsed time, a thickness of a deposited material, apredetermined deposition profile, and/or any other suitable processcondition and/or user input. For example, in some embodiments, thecontroller 114 maintains the double-sided target structure 2 in a firstorientation for a first predetermined time period. After the firstpredetermined time period has elapsed, the controller 114 is configuredto activate the drive mechanism 112 to rotate the double-sided targetstructure 2 to a second orientation.

In some embodiments, the controller 114 is configured to rotate thedouble-sided target structure 2 in a predetermined pattern. For example,in some embodiments, the controller 114 is configured to maintain thedouble-sided target structure 2 in a first orientation having the firstsputtering target 8 a in an opposed relationship with the work-piece130. The controller 114 maintains the first orientation for a firstpredetermined deposition period during which a PVD process deposits apredetermined thickness of the first material 8 a on the work-piece 130.After the first predetermined deposition period, the controller 114activates the drive mechanism 112 to rotate the double-sided targetstructure 2 to a second orientation having the second sputtering target8 b in an opposed relationship with the work-piece 130. The controller114 maintains the double-sided target structure 2 in the secondorientation for a second predetermined deposition period. After thesecond predetermined deposition period has elapsed, the controller 114can be activated to rotate the double-sided target structure 2 back tothe first orientation to allow for additional sputtering of the firstmaterial 8 a. It will be appreciated that the controller 114 can beconfigured to rotate the double-sided target structure 2 any number oftimes to achieve a predetermined profile on the work-piece 130.

In comparison with other approaches, the double-sided targetingstructure 2 provides for an in-situ deposition process that reducesmanufacturing time and prevents particle contamination duringdeposition, thereby increasing reliability and improving product yield.For example, the double-sided targeting structure 2 and associatedchamber 100 reduce the number of sputtering target transfers requiredfor each deposition process and reduces the number of process toolsrequired. In some instances, a single double-sided targeting structure 2can be used to perform a complete deposition and replaces three or moresputtering target transfers in other approaches. The discloseddouble-sided targeting structure 2 and associated chamber 100 furtherprovide an improvement in cycle time as compared to other approaches.For example, in some embodiments, a cycle time improvement of up to 80%may be realized using the double-sided targeting structure 2.

FIGS. 3A-3C illustrate a double-sided target structure 2 a positionedwithin the receiving area 104 of a deposition chamber 100 a, inaccordance with some embodiments. The double-sided target structure 2 aand the deposition chamber 100 a are respectively similar to thedouble-sided target structure 2 and deposition chamber 100 discussedabove, and similar description is not repeated herein. A first rotationmechanism 24 a of the double-sided target structure 2 a is coupled to arotation driver 120. The rotation driver 120 is configured to allowrotation of the rotatable body 4 of the double-sided target structure 2a from a first orientation to a second orientation. In some embodiments,the rotation driver 120 includes a driver 122 coupled to the rotationmechanism 24 a by a coupling mechanism 124. The coupling mechanism 124can include any suitable coupling mechanism configured to permanentlyand/or releaseably couple the handle 112 to the rotation mechanism 24 a.

In some embodiments, the coupling mechanism 124 includes a servomotorcoupling mechanism configured to couple the driver 122 to a servomotor(not shown) configured to control rotation of the double-sided targetstructure 2 a. The coupling mechanism 124 can include one or more gearsconfigured to couple to the servomotor. In some embodiments, theservomotor is configured to control rotation of the double-sided targetstructure 2 a in accordance with one or more predetermined depositionpatterns.

In some embodiments, the double-sided target structure 2 a includes aplanar rotation assembly 140 including a motor 142 and a gear rod 144.The planar rotation assembly 140 is configured to control planarrotation of the first magnet 20 a and/or the second magnet 20 b. Planarrotation of the magnets 20 a, 20 b results in planar rotation of therespective first material 8 a and/or second material 8 b coupled to themagnet 20 a, 20 b in a plane defined by a target surface of the material8 a, 8 b. Planar rotation of the target materials 8 a, 8 b increasesdeposition uniformity during a deposition process. In some embodiments,the motor 142 is a step motor configured to rotate the gear rod 144about a longitudinal axis. The gear rod 144 is coupled to rotationelements 146 a, 146 b coupled to respective first and second magnets 20a, 20 b. Rotation of the gear rod 144 about a longitudinal axis istranslated to planar rotation of the respective materials 8 a, 8 b.Although embodiments are illustrated herein having a motor 142 and agear rod 144, it will be appreciated that any suitable planar rotationsystem can be configured to rotate the first material 8 a and/or thesecond material during deposition.

FIGS. 4A-4C illustrate a double-sided target structure 2 b in variousrotational orientations, in accordance with some embodiments. FIG. 4Aillustrates the double-sided target structure 2 b in a first orientationhaving a first sputtering target 8 a positioned for a depositionprocess, such as a PVD process. For example, in some embodiments, thefirst sputtering target 8 a can be positioned in an opposed (or facing)orientation with a work-piece configured to have at least one materiallayer formed thereon during the deposition process, as discussed abovewith respect to FIG. 2 . The first sputtering target 8 a can include anysuitable deposition material, such as, for example, titanium.

FIG. 4B illustrates the double-sided target structure 2 b in apartially-rotated position. The double-sided target structure 2 bincludes a rounded rotation body 4 a. The double-sided target structure2 b is rotated from the first orientation shown in FIG. 4A, through thepartially-rotated position shown in FIG. 4B, and fully rotated to thesecond orientation shown in FIG. 4C. In the second orientationillustrated in FIG. 4C, a second sputtering target 8 a is positioned inan opposed orientation with the work-piece. The second sputtering target8 a can include any suitable deposition material, such as, for example,an aluminum alloy (e.g., AlCu).

In some embodiments, each of the sputtering targets 8 a, 8 b can have apredetermined deposition topography configured for deposition of therespective deposition material. For example, as shown in FIGS. 4A & 4C,the sputtering targets 8 a, 8 b can include a plurality of peaks 50 andvalleys 52 defining a predetermined deposition topography, although itwill be appreciated that other topographical features can be added tothe sputtering targets 8 a, 8 b to obtain a predetermined depositiontopography.

FIG. 5 illustrates a deposition system 200 including a plurality ofdeposition chambers 202 a-202 d each having double-sided sputteringtargets 2 c-1-2 c-4 (collectively “double-sided sputtering targets 2 c”)located therein, in accordance with some embodiments. The plurality ofdeposition chambers 202 a-202 d are arranged concentrically about aframe 204 of the deposition system 200. Each of the deposition chambers202 a-202 d are positioned at a respective opening 206 a-206 d in theframe 204. The openings 206 a-206 d are sized and configured to receivea work-piece 208 a-208 b therethrough.

In some embodiments, a pick-and-place mechanism 210 is positioned withinthe frame 204. The pick-and-place mechanism 210 is configured toretrieve a work-piece 208 a, 208 b from a first staging area 212 a andplace the work-piece in a predetermined position within a selected oneof the plurality of deposition chambers 202 a-202 d. In someembodiments, the pick-and-place mechanism 210 is configured to place awork-piece 208 a, 208 b on a pedestal located within the depositionchamber 202 a-202 d (see FIG. 2 ).

Each of the deposition chambers 202 a-202 d include a double-sidedsputtering target structure 2 c therein. The double-sided sputteringtargets 2 c are similar to the double-sided sputtering targets 2, 2 a, 2b discussed above, and similar description is not repeated herein. Insome embodiments, each of the double-sided sputtering targets 2 c arecoupled to independent drive mechanisms configured to independentlyrotate a respective sputtering target structure 2 c. When a work-piece208 a, 208 b is inserted into a selected one of the deposition chambers202 a-202 d, a deposition process is performed using the associated oneof the sputtering targets 2 c. For example, in some embodiments, a firstmaterial layer is formed on the work-piece 208 from a first side of theassociated double-sided sputtering target structure 2 c. After the firstmaterial is deposited, the associated sputtering target structure 2 c isrotated, and a second material layer is deposited on the work piece 208from a second side of the associated double-sided sputtering targetstructure 2 c.

In some embodiments, the pick-and-place mechanism 210 is configured toremove a selected work-piece 208 from one of the deposition chambers 202a-202 d after a deposition process has completed. For example, in someembodiments, the pick-and-place mechanism 210 is configured to retrievea selected work-piece 208 from the selected one of the depositionchambers 202 a-202 d and move the work-piece 208 to a second stagingarea 212 b. The pick-and-place mechanism 210 is operated by anindependent controller and/or by a controller configured to operate oneor more of the rotation mechanisms of the deposition chambers 202 a-202d.

FIG. 6 illustrates a method 300 of PVD deposition using a double-sidedsputtering target, in accordance with some embodiments. At step 302, adouble-sided sputtering target structure 2 is positioned within adeposition chamber 100. The double-sided sputtering target structure 2includes a first sputtering target 8 a coupled to a first side and asecond sputtering target 8 b coupled to a second side. Each of the firstand second sputtering targets 8 a, 8 b include a selected deposition (orsource) material. One or more rotation mechanisms 24 a, 24 b extend fromthe rotatable body 4 and interface with complimentary rotation elementsformed in the deposition chamber 100.

At step 304, a work-piece 130 is positioned on a pedestal 110 within thedeposition chamber 100. The work-piece 130 is configured to receive oneor more material layers through a deposition process, such as a PVDprocess. In some embodiments, the work-piece 130 can be positioned by apick-and-place mechanism 210.

At step 306, the double-sided sputtering target structure 2 ispositioned in a first orientation. In the first orientation, the firstsputtering target 8 a is placed in an opposed (e.g., facing)relationship with the work-piece 130. The second sputtering target 8 bis positioned away from, and segregated from, the work-piece 130 in thefirst orientation. In some embodiments, a face of the first sputteringtarget 8 a substantially defines a first plane and a face of thework-piece 130 substantially defines a second plane. The first andsecond planes are parallel.

At step 308, a deposition process deposits a first material layer on thework-piece 130. The first material layer is formed by sputtering thefirst material from the first sputtering target 8 a. In someembodiments, the deposition process deposits the first material layer toa predetermined thickness.

At step 310, the double-sided sputtering target structure 2 is rotatedfrom the first orientation to a second orientation. The secondorientation positions the second sputtering target 8 b in an opposed(e.g., facing) arrangement with the work-piece 130. In some embodiments,the double-sided sputtering target structure 2 is rotated by a drivemechanism, such as a motor, coupled to one or more of the rotationmechanisms 24 a, 24 b of the double-sided sputtering target structure 2.In some embodiments, the double-sided sputtering target structure 2 ismanually rotated by a manual rotation mechanism coupled to one of therotation mechanisms 24 a, 24 b. The first sputtering target 8 a ispositioned away from, and segregated from, the work-piece 130 in thesecond orientation.

At step 312, a deposition process deposits a second material layer onthe work-piece 130. The second material layer is formed by sputteringthe second material from the second sputtering target 8 b. In someembodiments, the deposition process deposits the second material layerto a predetermined thickness.

At optional step 314, the double-sided sputtering target structure 2 isrotated from the current orientation, e.g., the second orientation, toan opposite orientation, e.g., the first orientation. The double-sidedsputtering target structure 2 can be rotated by any suitable mechanism,such as the drive mechanism and/or the manual rotation mechanismdiscussed above.

At optional step 316, a deposition process deposits an additionalmaterial layer on the work-piece 130. The additional material layer isformed by sputtering a material from a selected sputtering target 8 a, 8b (i.e., a selected sputtering target positioned in an opposingrelationship with the work-piece 130.) The method 300 can repeat steps314 and 316 to deposit any number of additional layers from anycombination of the first and second targets 8 a, 8 b.

At step 318, the work-piece 130 is removed from the deposition chamber100. The work-piece 130 can be provided to additional chambersconfigured to deposit additional and/or alternative material layers, canbe placed in a waiting area, and/or can be provided for additionalprocessing. In some embodiments, the work-piece 130 is removed from thechamber 100 by a pick-and-place mechanism.

In various embodiments, a sputtering target structure is disclosed. Thesputtering target structure includes a body having a first side and anopposing second side. A first sputtering target is coupled to the firstside of the body. The first sputtering target includes a first material.A second sputtering target is coupled to the second side of the body.The second sputtering target includes a second material. A rotationmechanism is coupled to the body and is configured to rotate the body.

In various embodiments, a system is disclosed. The system includes adeposition chamber having a target receiving area and a work-piecereceiving area. A double-sided sputtering target structure is positionedwithin the target receiving area. The double-sided sputtering targetstructure includes a body having a first side and an opposing secondside. A first sputtering target is coupled to the first side of thebody. The first sputtering target includes a first material. A secondsputtering target is coupled to the second side of the body. The secondsputtering target includes a second material. A rotation mechanism isconfigured to rotatably couple the double-sided sputtering targetstructure within the deposition chamber. The rotation mechanism isconfigured to rotate the double-sided sputtering target structure.

In various embodiments, a method of sputtering is disclosed. The methodincludes disposing a double-sided sputtering target structure in adeposition chamber. The double-sided sputtering target structureincludes a body extending between a first side and an opposing secondside, a first sputtering target coupled to the first side of the body,and a second sputtering target coupled to the second side of the body.The first sputtering target includes a first material and the secondsputtering target includes a second material. A work-piece is positionedin the deposition chamber. The work-piece is positioned in an opposedfacing relationship with the first sputtering target. A first materiallayer is formed on the work-piece by sputtering material from the firstsputtering target. The double-sided sputtering target structure isrotated to position the second sputtering target in the opposed facingrelationship with the work-piece. A second material layer is formed onthe work-piece by sputtering material from the second sputtering target.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A target structure, comprising: a body having afirst side and an opposing second side; a first sputtering targetcoupled to the first side of the body, the first sputtering targetcomprising a first material; a second sputtering target coupled to thesecond side of the body, the second sputtering target comprising asecond material; a retention device comprising a first magnetic plateand a second magnetic plate, wherein the first magnetic plate isconfigured to maintain the first sputtering target in a fixed positionwith respect to the first side of the body and the second magnetic plateis configured to maintain the second sputtering target in a fixedposition with respect to the second side of the body; and a rotationmechanism coupled to the body, the rotation mechanism configured torotate the body.
 2. The target structure of claim 1, wherein the firstand second sputtering targets are magnetically coupled to the first andsecond magnetic plates.
 3. The target structure of claim 1, wherein thefirst material and the second material are different materials.
 4. Thetarget structure of claim 1, wherein the first material comprisestitanium nitride.
 5. The target structure of claim 1, wherein the secondmaterial comprises an aluminum copper alloy.
 6. The target structure ofclaim 1, wherein the rotation mechanism comprises at least one rotationshaft extending from the body.
 7. The target structure of claim 6,wherein the at least one rotation shaft comprises a first rotation shaftand a second rotation shaft aligned on a longitudinal axis extendingthrough a center of the body.
 8. The target structure of claim 1,wherein each of the first side and the second side of the body include arecess sized and configured to respectively receive the first and secondsputtering targets therein.
 9. A physical vapor deposition (PVD) system,comprising: a deposition chamber having a target receiving area and awork-piece receiving area; and a double-sided sputtering targetstructure positioned within the target receiving area, the double-sidedsputtering target structure comprising: a body having a first side andan opposing second side; a first sputtering target coupled to the firstside of the body; a second sputtering target coupled to the second sideof the body; a retention device comprising a first magnetic plate and asecond magnetic plate wherein the first magnetic plate is configured tomaintain the first sputtering target in a fixed position with respect tothe first side of the body and the second magnetic plate is configuredto maintain the second sputtering target in a fixed position withrespect to the second side of the body; and a rotation mechanismconfigured to rotatably couple to the double-sided sputtering targetstructure within the deposition chamber, the rotation mechanismconfigured to rotate the double-sided sputtering target structure. 10.The PVD system of claim 9, wherein the rotation mechanism comprises atleast one rotation shaft extending from the body of the double-sidedsputtering target structure and extending through a side wall of thedeposition chamber.
 11. The PVD system of claim 9, further comprising adrive mechanism coupled to the rotation mechanism, wherein the drivemechanism is configured to rotate the double-sided sputtering targetstructure from the first orientation to the second orientation.
 12. ThePVD system of claim 11, wherein the drive mechanism comprises a motor.13. The PVD system of claim 9, wherein the first and second sputteringtargets are magnetically coupled to the first and second sides of thebody.
 14. The PVD system of claim 9, wherein the first and secondmaterials are different materials.
 15. The PVD system of claim 14,wherein the first material comprises titanium nitride and the secondmaterial comprises aluminum copper.
 16. A method of sputtering,comprising: disposing a double-sided sputtering target structure in adeposition chamber, wherein the double-sided sputtering target structurecomprises: a body extending between a first side and an opposing secondside, a first sputtering target coupled to the first side of the body, asecond sputtering target coupled to the second side of the body, and aretention device comprising a first magnetic plate and a second magneticplate, wherein the first magnetic plate is configured to maintain thefirst sputtering target in a fixed position with respect to the firstside of the body and the second magnetic plate is configured to maintainthe second sputtering target in a fixed position with respect to thesecond side of the body; positioning a work-piece in the depositionchamber, wherein the work-piece is positioned in an opposed facingrelationship with the first sputtering target; forming a first materiallayer on the work-piece by sputtering material from the first sputteringtarget; rotating the double-sided sputtering target structure toposition the second sputtering target in the opposed facing relationshipwith the work-piece; and forming a second material layer on thework-piece by sputtering material from the second sputtering target. 17.The method of claim 16, wherein the first material layer and the secondmaterial layer are each formed with the work-piece in the depositionchamber.
 18. The method of claim 16, comprising: rotating thedouble-sided sputtering target to re-position the first sputteringtarget in the opposed facing relationship with the work-piece; andforming a third material layer above the second material layer on thework-piece by sputtering material from the first sputtering target. 19.The method of claim 16, wherein the deposition chamber is not cleanedbetween forming the first material layer and forming the second materiallayer.
 20. The method of claim 16, wherein the first material layercomprises titanium nitride and the second material layer comprisesaluminum copper.